• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A large magnetoresistive sensor provided in a magnetoresistive head assembly, wherein the sensor includes a free layer in the form of a thin film that reads recorded data under the influence of a magnetic field on a magnetic recording medium, and a conductive layer stacked on the free layer. A chain conducting spacer, a pinned layer stacked above the conducting spacer, and a layer stacked above the pinned layer to hold the magnetization direction of the magnetic domain of the pinned layer to be perpendicular to the surface of the magnetic recording medium. A pinning layer which is a ferromagnetic material, hard magnets provided on both sides of the free layer to hold the magnetization direction of the magnetic domains at both ends of the free layer in a horizontal direction with the surface of the magnetic recording medium, and on the upper side of the hard magnet, Upper layer laminated to hold the magnetization direction of the domain uniformly and Group is between the magnet and the upper hard layer is formed in the insulating layer to be posted in order to avoid the mutual electromagnetic interference, and has a configuration in which the magnetization direction of the pinned layer of the magnetic domain magnetization direction and the free layer magnetic domains that are not interfering with each other.
    公开号:KR20000061307A
    申请号:KR1019990010257
    申请日:1999-03-25
    公开日:2000-10-16
    发明作者:김종윤
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    Magneto-Resistive Head For Hard Disk Drive
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-resistive head device of a hard disk drive, and more particularly to a hard magnet provided in a spin-valve type giant magneto-resistive sensor. It's about structure.
    In general, a magnetic head apparatus is used as an apparatus for recording / reading information on a magnetic recording medium. The magnetic head device records data by changing a direction of magnetic flux on a rotating magnetic recording medium, and reads recorded data according to a change in resistance due to the changed direction of magnetic flux.
    The magnetic head device uses an AMR sensor (Anisotropic Magnetic-resistive Sensor) or a GMR sensor (Giant Magneto-resistive Sensor) to read the change in resistance due to the direction of the magnetic flux on the magnetic recording medium. Therefore, the head device to which the AMR sensor or the GMR sensor is applied as the reading device is called a magnetoresistive head device.
    In particular, the GMR sensor (hereinafter, referred to as a 'magnitude magnetoresistance sensor') has a larger change in the resistance according to the direction of the magnetic flux on the magnetic recording medium than the AMR sensor even though a constant current is applied. The ability is excellent. Therefore, the giant magnetoresistive sensor is widely used in a magnetic recording device requiring high capacity and high density.
    1 is a perspective view of a slider showing a position of a magnetoresistive head assembly. FIG. 1 is a view illustrating a slider 100 having a magnetoresistive head assembly 10 installed at an end of a certain actuator installed to flow on a magnetic recording medium installed to be rotatable at high speed. By positioning, data on the recording medium is recorded or read. In general, a slider on a magnetic recording medium such as a hard disk is raised to a certain height so that the magnetoresistive head assembly 10 installed on the lower side thereof performs its function.
    As shown in Fig. 1, the magnetoresistive head assembly 10 is provided at the lower surface of the slider 100 in contact with the magnetic recording medium. In addition, on the lower surface of the slider 100, which is the upper surface of the magnetoresistive head assembly 10, to the ABS (Air Bearing Surface) surface 101 to protect and lubricate the magnetoresistive head assembly 10 Processed. The ABS surface 101 is formed of a DLC (Dimond Like Carbon) layer.
    FIG. 2 is a block diagram of a general magnetoresistive head assembly. The write write pole 11 is spaced apart from the write write pole 11 and has a write gap 12a at a predetermined distance from the write write pole. Pole (12), the lower shield (14) which is provided to maintain a certain distance from the recording lower pole and the recording lower pole 12 and the lower shield (14) on the recording medium It consists of a magnetoresistive sensor 20 which is installed to change the electrical characteristics according to the magnetic characteristics. The magnetoresistive sensor 20 uses a giant magnetoresistive sensor (GMR Sensor).
    The magnetoresistive head assembly 10 configured as described above is installed at the lower surface of the slider so that each end thereof coincides with the lower surface of the slider by a sputtering process. The filling material filled by the sputtering process is SiO 2. I use the same glass material.
    3 is a partial cross-sectional view of a general magnetoresistive head assembly showing the position of the magnetoresistive sensor.
    When the magnetoresistive head assembly 10 of FIG. 2 is viewed in cross section, as illustrated in FIG. 3, a coil 11a is wound a plurality of times between the recording upper pole 11 and the recording lower pole 12. By applying a current to the coil 11a, data is recorded in a manner that changes the direction of the magnetic flux on the magnetic recording medium 30 below.
    In addition, a giant magnetoresistive sensor 20 for reading data recorded on the magnetic recording medium 30 is located between the upper upper pole 11 and the lower protective film 14. Therefore, when a constant current is applied to the giant magnetoresistive sensor 20, the value on which the resistance changes in accordance with the direction of the magnetic flux on the magnetic recording medium 30 on the lower side is read so that the data on the magnetic recording medium can be read. It is.
    At this time, as shown in Figure 3, the ABS surface 15, which is a DLC (Dimond Like Carbon) layer having a predetermined thickness is formed on the lower side of the slider, when lubrication and magnetoresistive head assembly upon contact with the magnetic recording medium (10) serves to prevent wear.
    4 is a block diagram of a giant magnetoresistive sensor according to an embodiment of the prior art.
    As shown in FIG. 4, the conventional giant magnetoresistive sensor has a pinning layer 21 and a pinned layer 22 in which the magnetization direction of the magnetic domain is fixed by the pinning layer. And a conducting spacer 23 and a free layer or sensing layer 24, which is a substantial sensor layer, are sequentially coupled (stacked).
    When the pinning layer 21 is applied with a current using an antiferromagnetic material, the magnetization direction of the magnetic domain of the pinned layer 22, which is a lower ferromagnetic material, can be maintained perpendicular to the surface of the magnetic recording medium. Make sure The pinning layer 21 is formed of a material such as FeMn, NiMn.
    In addition, the pinned layer 22 and the free layer 24 positioned at the boundary of the conducting spacer 23 use a ferromagnetic material such as a permalloy as a material. Since the permalloy has a very specific permeability and is a material exhibiting hysteresis characteristics due to magnetization, it has a structure of magnetic domains. Therefore, when a current is applied to the free layer 24 of the permalloy material, electrons reach the pinned layer 22 by the magnetic domain via the conducting spacer 23 in the free layer 24. NiFe is used as the permalloy material.
    At this time, the free layer 24, which is a ferromagnetic thin film formed by a process such as deposition or electrodeposition, should be formed in a single domain so that magnetic domains face a certain direction, but the magnetic domains of both end regions of the structure have a constant direction. It is not directed, resulting in edge effects or Barkhausen noise at both ends.
    Accordingly, a hard magnet 25, which is a permanent magnet for reducing the edge effect or the Bachhausen noise as described above, to hold the magnetization direction of the magnetic domains located at both ends of the free layer 24 in one direction, is the free layer. It is provided at both ends of (24), respectively. The hard magnet 25 uses CoCrPt, which is an alloy of Co, Cr, and Pt.
    In addition, a lead portion 26 made of a conductive material is stacked on top of each of the hard magnets 25 to apply current to the free layer 24.
    However, the hard magnet installed as described above is provided to contact the pinning layer on the uppermost side from the free layer. Therefore, the hard magnets located at both ends of the free layer in order to hold the magnetization direction of the magnetic domain in a direction parallel to the surface of the magnetic recording medium may extend to the both ends of the pinning layer to hold the magnetization direction of the pinned layer perpendicular to the recording medium surface. Because they are in contact with each other, they interfere with each other in a normal direction, which causes a problem of instability of the GMR head.
    In order to solve the above problems, an object of the present invention is to provide a magnetism of a hard disk drive having a GMR sensor having a structure in which a hard magnet is installed so that the magnetization direction of the pinned layer and the magnetization direction of the free layer are not interfered with each other. It is to provide a resistance head device.
    Another object of the present invention is to provide a magnetoresistive head device of a hard disk drive in which a hard magnet installed for single domain of a free layer is installed so as not to be affected by the pinned layer on the upper side thereof, thereby removing the instability of the GMR sensor.
    In order to achieve the above object, the present invention provides a recording upper pole having a coil wound many times at a lower surface of a slider to record / read data on a magnetic recording medium, and at a predetermined interval from the recording upper pole. A magnetoresistance having a recording lower pole spaced apart from each other to have a writing gap, a lower shielding film arranged to be spaced apart from the recording lower pole at a predetermined interval, and a plurality of layers provided to have a reading function between the recording lower pole and the lower shielding film. In the magnetoresistive head device composed of a sensor, a plurality of layers of the magnetoresistive sensor are formed in a triple structure of a hard magnet and an upper layer having an insulating layer in order to hold the magnetization direction of the magnetic domain of each layer in a desired direction. It is characterized by.
    1 is a perspective view of a slider showing the position of the magnetoresistive head assembly.
    2 is a block diagram of a general magnetoresistive head assembly.
    Figure 3 is a partial cross-sectional view of a general magnetoresistive head assembly showing the position of the magnetoresistive sensor.
    Figure 4 is a block diagram of a giant magnetoresistive sensor according to an embodiment of the prior art.
    5 is a block diagram of a giant magnetoresistive sensor according to an embodiment of the present invention.
    <Description of Major Symbols in Drawing>
    20: giant magnetoresistive sensor 21: pinning layer
    22: Pinned Layer 23: Conducting spacer
    24: Free Layer 250: Hard Magnet
    251: Insulating Layer 252: Upper Layer
    Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are used for the same components, even if displayed on different drawings. In the case where it is determined that the gist of the present invention may be unnecessarily obscured, detailed description thereof will be omitted.
    5 is a block diagram of a giant magnetoresistive sensor according to an embodiment of the present invention.
    The configuration of the magnetoresistive head assembly according to the present invention has been described with reference to FIGS. 1 to 3 and will be omitted. Therefore, the configuration of the giant magnetoresistive sensor applied to the magnetoresistive head assembly will be described.
    As shown in FIG. 5, a giant magnetoresistive sensor (GMR sensor) according to the present invention has a pinning layer 21 and a magnetization direction of magnetic domains fixed by the pinning layer. A pinned layer 22, a conducting spacer 23, and a free layer or sensing layer 24, which is a practical sensor layer, are sequentially coupled (stacked). Have
    When the pinning layer 21 is applied with a current using an antiferromagnetic material, the magnetization direction of the magnetic domain of the pinned layer 22, which is a lower ferromagnetic material, can be maintained perpendicular to the surface of the magnetic recording medium. Make sure The pinning layer 21 is formed of a material such as FeMn, NiMn.
    In addition, the pinned layer 22 and the free layer 24 positioned at the boundary of the conducting spacer 23 use a ferromagnetic material such as a permalloy as a material. Since the permalloy has a very specific permeability and is a material exhibiting hysteresis characteristics due to magnetization, it has a structure of magnetic domains. Therefore, when a current is applied to the free layer 24 of the permalloy material, electrons reach the pinned layer 22 by the magnetic domain via the conducting spacer 23 in the free layer 24. NiFe is used as the permalloy material.
    At this time, the free layer 24, which is a ferromagnetic thin film formed by a process such as deposition or electrodeposition, should be formed in a single domain so that magnetic domains face a certain direction, but the magnetic domains of both end regions of the structure have a constant direction. It is not directed, resulting in edge effects or Barkhausen noise at both ends.
    Accordingly, the hard magnet 250, which is a permanent magnet for reducing the edge effect or the Bachhausen noise as described above, to hold the magnetization direction of the magnetic domains located at both ends of the free layer 24 in one direction, is formed in the free layer. It is provided at both ends of (24), respectively. The hard magnet 250 uses CoCrPt, an alloy of Co, Cr, and Pt.
    In addition, a lead portion 26, which is a conductive material, is stacked on an uppermost side of each of the hard magnets 250 to apply a current to the free layer 24.
    In this case, the hard magnet 250 is installed to contact only on both sides of the free layer 24. Thereafter, an insulating layer 251 having an electromagnetic insulation is formed on the hard magnet 250. A separate upper layer 252 is stacked on the insulating layer 251. The upper layer 252 is formed of the same material as the pinning layer 21 to assist the pinning layer 21 to hold the magnetization direction of the magnetic domain of the pinned layer 22.
    Therefore, the insulating layer 251 uses AL 2 O 3 or SiO 2 . In addition, the upper layer 252 uses FeMn or NiMn, which is an antiferromagnetic material, such as the pinning layer 21. That is, the hard magnet 250 assists to orient the magnetization direction of the magnetic domain of the free layer 24 in parallel with the surface of the magnetic recording medium, and the upper layer 252 is pinned layer 22 perpendicular to the surface of the magnetic recording medium. It is helping to orient the magnetization of the magnetic domain.
    As described above, the giant magnetoresistive sensor according to the embodiment of the present invention has the magnetization direction of the magnetic domain of the pinned layer and the magnet of the hard magnet holding the magnetization direction of the magnetic domain of the free layer in parallel with the recording medium surface. By installing the upper layer to be laminated with an insulator, the magnetization direction of the pinned layer and the magnetization direction of the free layer are not interfered with each other, thereby eliminating instability of the GMR sensor. .
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] A recording upper pole having a coil wound many times in place on the lower surface of the slider for recording / reading data on a magnetic recording medium, and a recording lower pole installed to have a writing gap spaced apart from the recording upper pole at regular intervals. In the magnetoresistive head device comprising a magnetoresistive sensor having a lower shielding film installed to be spaced apart from the recording lower pole at a predetermined interval, and a plurality of layers provided to have a reading function between the recording lower pole and the lower shielding film.
    The magnetoresistance of the hard disk drive, wherein both sides of the plurality of layers of the magnetoresistive sensor are formed in a triple structure of a hard magnet and an upper layer including an insulating layer to hold the magnetization direction of the magnetic domain of each layer in a desired direction. Head device.
    [2" claim-type="Currently amended] The method of claim 1,
    The upper layer is a magnetoresistive head device of a hard disk drive, characterized in that formed of anti-ferromagnetic material FeMn or NiMn.
    [3" claim-type="Currently amended] The method of claim 1,
    The insulating layer is a magnetoresistive head device of a hard disk drive, characterized in that formed of AL 2 O 3 or SiO 2 .
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    同族专利:
    公开号 | 公开日
    KR100694960B1|2007-03-14|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-03-25|Application filed by 윤종용, 삼성전자 주식회사
    1999-03-25|Priority to KR1019990010257A
    2000-10-16|Publication of KR20000061307A
    2007-03-14|Application granted
    2007-03-14|Publication of KR100694960B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019990010257A|KR100694960B1|1999-03-25|1999-03-25|Magneto-Resistive Head For Hard Disk Drive|
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